The MOS Transistor

Features

• Unique features of this text
• Unified, careful treatment, starting from basic physical principles and explaining MOS transistor phenomena in a logical and systematic fashion, supplemented with extensive intuitive discussions
• In-depth coverage of the development of many important models—ranging from the simple to the sophisticated—clearly identifying the connections between them, and encompassing many aspects of modeling, including dc, small-signal, large-signal transient, quasi-static operation, non-quasi-static operation, and noise.
• New to this Indian Edition
• Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth,simple manner.
• Expanded discussion of small-dimension effects,including velocity saturation,drain-induced barrier lowering, balistic operation,polysilicon depletio,quantum effects,gate tuneeling current, and gate-induced drain leakage.
• Expanded discussion of small-signal modeling.
• New chapter on substrate non-uniformity and structural effects,discussing transversal and lateral doping nonuniformity,stress and well proximity effects, and statistical variability.
• A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
• Extensively updated bibliography