The MOS Transistor
Price: 900.00 INR
ISBN:
9780198097372
Publication date:
18/11/2013
Paperback
752 pages
242.0x185.0mm
Price: 900.00 INR
ISBN:
9780198097372
Publication date:
18/11/2013
Paperback
752 pages
242.0x185.0mm
Third Edition
Yannis Tsividis & Colin McAndrew
Suitable for: Undergraduate Text
Rights: For Sale in (Nepal, Bangladesh, Sri Lanka, Myanmar, Pakistan, )
Third Edition
Yannis Tsividis & Colin McAndrew
Description
The MOS Transistor, Indian Third Edition, has become a standard in academia and industry. Extensively revised and updated, the Indian third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.
Third Edition
Yannis Tsividis & Colin McAndrew
Table of contents
Chapter 1. Review of Fundamentals and MOSFET Overview
Chapter 2. The MOS Capacitor
Chapter 3. The Three-Terminal MOS Structure
Chapter 4. The Four-Terminal MOS Transistor
Chapter 5. Small-Channel and Thin Oxide Effects
Chapter 6. Large-Signal Modeling of the MOS Transistor in Transient Operation
Chapter 7. Small-Signal Modeling For Low and Medium Frequencies
Chapter 8. Small-Signal Modeling For High-Frequency Operation
Chapter 9. Substrate Nonuniformity and Other Structural Effects
Chapter 10. Modeling for Circuit Simulation
Appendices
Index
Third Edition
Yannis Tsividis & Colin McAndrew
Features
- Unique features of this text
- Unified, careful treatment, starting from basic physical principles and explaining MOS transistor phenomena in a logical and systematic fashion, supplemented with extensive intuitive discussions
- In-depth coverage of the development of many important models—ranging from the simple to the sophisticated—clearly identifying the connections between them, and encompassing many aspects of modeling, including dc, small-signal, large-signal transient, quasi-static operation, non-quasi-static operation, and noise.
- New to this Indian Edition
- Energy bands and the energy barrier viewpoint are integrated into the discussion in a smooth,simple manner.
- Expanded discussion of small-dimension effects,including velocity saturation,drain-induced barrier lowering, balistic operation,polysilicon depletio,quantum effects,gate tuneeling current, and gate-induced drain leakage.
- Expanded discussion of small-signal modeling.
- New chapter on substrate non-uniformity and structural effects,discussing transversal and lateral doping nonuniformity,stress and well proximity effects, and statistical variability.
- A completely re-written chapter on modeling for circuit simulation, covering the considerations and pitfalls in the development of models for computer-aided design
- Extensively updated bibliography
Third Edition
Yannis Tsividis & Colin McAndrew
Description
The MOS Transistor, Indian Third Edition, has become a standard in academia and industry. Extensively revised and updated, the Indian third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.
Read MoreTable of contents
Chapter 1. Review of Fundamentals and MOSFET Overview
Chapter 2. The MOS Capacitor
Chapter 3. The Three-Terminal MOS Structure
Chapter 4. The Four-Terminal MOS Transistor
Chapter 5. Small-Channel and Thin Oxide Effects
Chapter 6. Large-Signal Modeling of the MOS Transistor in Transient Operation
Chapter 7. Small-Signal Modeling For Low and Medium Frequencies
Chapter 8. Small-Signal Modeling For High-Frequency Operation
Chapter 9. Substrate Nonuniformity and Other Structural Effects
Chapter 10. Modeling for Circuit Simulation
Appendices
Index